| PART |
Description |
Maker |
| CM300DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a>
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз
N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
| FDD5810 FDD581007 FDD5810-F085 |
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
N-Channel Logic Level Trench㈢ MOSFET
N-Channel Logic Level Trench? MOSFET
|
Fairchild Semiconductor
|
| FDMC2674_07 FDMC2674 FDMC267407 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ486ZU-TL-E 2SJ486ZU-TR-E 2SJ486 |
300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| ISL9N306AD ISL9N306AD3 ISL9N306AD3ST |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз 50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V 50A 6m
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDI3632 FDP3632 FDB3632 |
N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhm
N-Channel UltraFET Trench MOSFET 100V, 80A, 9m Ohm
|
Fairchild Semiconductor
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| STB46NF30 STP46NF30 STW46NF30 |
N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a D2PAK package
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET II Power MOSFET in D2PAK, TO-220 and TO-247 packages
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET?II Power MOSFET in D2PAK, TO-220 and TO-247 packages
|
ST Microelectronics
STMicroelectronics
|
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